Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes

Conference ·
DOI:https://doi.org/10.2172/2540449· OSTI ID:2540449
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
+ Show Author Affiliations
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
Vehicle Technologies Program
DOE Contract Number:
NA0003525
OSTI ID:
2540449
Report Number(s):
SAND2024-01761C
Country of Publication:
United States
Language:
English

Similar Records

XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
Conference · Wed May 01 00:00:00 EDT 2024 · OSTI ID:2540444
Selective Area Regrowth of p-type GaN and AlGaN for Power Diodes (invited).
Conference · Sun May 01 00:00:00 EDT 2022 · OSTI ID:2003079
Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference · Mon Nov 30 23:00:00 EST 2020 · OSTI ID:1835967

Related Subjects