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Title: Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media

Journal Article · · IEEE Journal of Quantum Electronics
DOI:https://doi.org/10.1109/3.502365· OSTI ID:253676
; ; ; ;  [1]
  1. Lawrence Livermore National Lab., CA (United States)

The absorption and emission properties of transition metal (TM)-doped Zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media. Crystals of ZnS, ZnSe, and ZnTe, individually doped with Cr{sup 2+}, Co{sup 2+}, Ni{sup 2+}, or Fe{sup 2+}, have been evaluated. The absorption and emission properties are presented and discussed in terms of the energy levels from which they arise. The absorption spectra of the crystals studied exhibit strong bands between 1.4 and 2.0 {micro}m which overlap with the output of strained-layer InGaAs diodes. The room-temperature emission spectra reveal wide-band emissions from 2--3 {micro}m for Cr and from 2.8--1.0 {micro}m for Co. Laser demonstrations of Cr:ZnS and Cr:ZnSe have been performed in a laser-pumped laser cavity with a Co:MgF{sub 2} pump laser. The output of both lasers were determined to peak at wavelengths near 2.35 {micro}m, and both lasers demonstrated a maximum slope efficiency of approximately 20%. Based on these initial results, the Cr{sup 2+} ion is predicted to be a highly favorable laser ion for the mid-IR when doped into the zinc chalcogenides; Co{sup 2+} may also serve usefully, but laser demonstrations yet remain to be performed.

DOE Contract Number:
W-7405-ENG-48
OSTI ID:
253676
Journal Information:
IEEE Journal of Quantum Electronics, Vol. 32, Issue 6; Other Information: PBD: Jun 1996
Country of Publication:
United States
Language:
English