Cr{sup 2+}-doped zinc chalcogenides as efficient, widely tunable mid-infrared lasers

Journal Article · Tue Apr 01 04:00:00 EST 1997 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/3.563390· OSTI ID:471133

Page, R H; Schaffers, K I; DeLoach, L D ^[1]

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1. Lawrence Livermore National Lab., CA (United States); and others

Transition-metal-doped zinc chalcogenide crystals have recently been investigated as potential mid-infrared lasers. Tetrahedrally coordinated Cr{sup 2+} ions are especially attractive as lasants on account of high luminescence quantum yields for emission in the 2,000--3,000-nm range. Radiative lifetimes and emission cross sections of the upper {sup 5}E state are respectively {approximately}10 {micro}s and {approximately}10{sup {minus}18} cm{sup 2}. The associated absorption band peaked at {approximately}1,800 nm enables laser-diode pumping of the Cr{sup 2+} systems. Laser demonstrations with ZnS:Cr and ZnSe:Cr (using a MgF{sub 2}:Co{sup 2+} laser pump source) gave slope efficiencies up to 30%. Excited-state-absorption losses appear small, and passive losses dominate at present. Tuning experiments with a diffraction grating produce a tuning range covering at least 2,150--2,800 nm. Laser crystals can be produced by Bridgman growth, seeded physical vapor transport, or diffusion doping. Zinc chalcogenide thermomechanical properties of interest for medium-to-high-power operation compare favorably with those of other host materials, except for the larger refractive-index derivative dn/dT.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 471133
• Journal Information: IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics Journal Issue: 4 Vol. 33; ISSN 0018-9197; ISSN IEJQA7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CHALCOGENIDES
CHROMIUM IONS
DOPED MATERIALS
INFRARED RADIATION
LASER MATERIALS
SOLID STATE LASERS
ZINC COMPOUNDS