Site-Dependent Fine Structure in Photoemission Branching Ratios

Journal Article · Mon Sep 04 00:00:00 EDT 1995 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.75.2043· OSTI ID:249562

Sieger, M T; Miller, T; Chiang, T ^[1]

---

1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

The photoemission intensity ratio between the 4{ital d}{sub 3/2} and 4{ital d}{sub 5/2} spin-orbit-split states of the Sb 4{ital d} core level, known as the branching ratio, shows fine-structure oscillations as a function of photon energy, which are different for the Sb/Si(111)-({radical}3{times}{radical}3) and (5{radical}3{times}5{radical}3) adsorbate structures. We demonstrate that this branching ratio fine structure is related to the diffraction {chi} function, and can be used to deduce the adsorbate atomic structure. The dependence of the branching ratio on atomic bonding geometry has important implications for high-resolution core-level line shape analyses.

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 249562
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 75; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ADSORPTION
ANTIMONY
ANTIMONY ADDITIONS
EMISSION SPECTRA
FINE STRUCTURE
L-S COUPLING
OSCILLATIONS
PHOTOEMISSION
SILICON