Raman study of ``boson peak`` in ion-implanted GaAs: Dependence on ion dose and dose rate
Conference
·
OSTI ID:245529
- Institut Rudjer Boskovic, Zagreb (Croatia)
- Oak Ridge National Lab., TN (United States)
Findings on the amorphization of GaAs were interpreted in the fractal model and correlated with recent analysis of ion-induced damage from Raman and ion channeling data. The Raman spectra were decomposed on phonon-fracton cruve and Gaussian bands by fitting. Crossover frequency {omega}{sub col} between phonon and fracton regimes and the fractal exponent ({sigma}+d-D){tilde d}/D shows a pronounced dependence on applied ion dose and weak dependence on dose rate. Evolution of the fractal component is compared with ion channeling and Raman spectra of phonon bands. The fractal component is strongly dependent on ion dose and is the amorphous component and is weakly dependent on dose rate. It indicates that the fractal component is not connected with point crystalline defects, to which ion channeling is particularly sensitive. The fractal correlation length {xi} and spectral dimension d, calculated from crossover frequency and fractal exponent, changes from {xi}=6A and {tilde d}=0.2 for weakly damaged samples to {xi}=10A and {tilde d}=0.8 for completely amorphized samples.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 245529
- Report Number(s):
- CONF-9307124--5; ON: DE96010638
- Country of Publication:
- United States
- Language:
- English
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