Raman and ion channeling analysis of damage in ion-implanted GaAs: Dependence on ion dose and dose rate

Journal Article · Sun Mar 15 04:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.351077· OSTI ID:7047256

Desnica, U V ^[1]; Wagner, J ^[2]; Haynes, T E; Holland, O W ^[3]

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1. Ruder Boskovic Institute, 41000 Zagreb, Croatia (Yugoslavia)
2. Fraunhofer-Institut fur Angewandte Festkorperphysik, Tullasrasse 72, 7800 Freiburg (Germany)
3. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Raman scattering and ion channeling techniques were used to investigate the damage in GaAs implanted at room temperature with 100-keV Si{sup +} ions. The ion-induced damage was analyzed for different ion doses and dose rates (current densities). The development of different damage components was monitored by comparing a Raman signal which is specific to amorphization in GaAs to ion channeling results which are sensitive to small-volume crystalline defects, as well as to amorphous regions. Raman analysis showed that the rate of growth of the amorphous fraction with implant dose was comparable to the growth rate of the total damage as determined by ion channeling. However, while Raman analysis indicated a weak dependence of damage on dose rate, the ion channeling results showed a substantially stronger dependence. These results demonstrate that the damage morphology in GaAs is dependent upon both dose and dose rate, and that the dose-rate-dependent component of the total damage consists primarily of crystalline defects.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7047256
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:6; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
DAMAGE
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RAMAN SPECTRA
SILICON IONS
SPECTRA