A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

Sung, Woongje; Baliga, B. Jayant

doi:10.1109/ted.2017.2664051

A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

Journal Article · Thu Feb 23 00:00:00 EST 2017 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2017.2664051· OSTI ID:2440206

^[1]; Baliga, B. Jayant ^[2]

State University of New York Polytechnic Institute, Albany, NY (United States); University at Albany
North Carolina State University, Raleigh, NC (United States)

This paper compares five edge termination techniques for SiC high voltage devices: Single Zone Junction Termination Extension (SZ-JTE), Ring Assisted-JTE (RA-JTE), Multiple Floating Zone-JTE (MFZ-JTE), Hybrid-JTE, and Floating Field Rings (FFRs). PiN diodes with these edge terminations were fabricated on a 4.5kV-rated 4H-SiC epi-layer. Furthermore, it was experimentally demonstrated that the Hybrid-JTE provides a nearly ideal breakdown voltage (~99% of the ideal parallel plane breakdown voltage) with a stable avalanche blocking behavior. RA-JTE, with tight control of the JTE implant dose, is demonstrated to be the most area-efficient edge termination structure for SiC power devices.

Research Organization:: North Carolina State University, Raleigh, NC (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006521

OSTI ID:: 2440206

Alternate ID(s):: OSTI ID: 1536650

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 4 Vol. 64; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (10)

Fundamentals of Power Semiconductor Devices Baliga, B. Jayant https://doi.org/10.1007/978-0-387-47314-7	book	January 2008
Study of avalanche breakdown and impact ionization in 4H silicon carbide Konstantinov, A. O.; Wahab, Q.; Nordell, N. Journal of Electronic Materials, Vol. 27, Issue 4 https://doi.org/10.1007/s11664-998-0411-x	journal	April 1998
22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation Brunt, E. V.; Allen, S. T.; Burk, A. A. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) https://doi.org/10.1109/ISPSD.2014.6856050	conference	June 2014
Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes Zhao, J. H.; Alexandrov, P.; Li, X. IEEE Electron Device Letters, Vol. 24, Issue 6 https://doi.org/10.1109/LED.2003.813370	journal	June 2003
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension Sung, Woongje; Van Brunt, Edward; Baliga, B. J. IEEE Electron Device Letters, Vol. 32, Issue 7 https://doi.org/10.1109/LED.2011.2144561	journal	July 2011
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension Sung, Woongje; Baliga, B. J. IEEE Electron Device Letters, Vol. 37, Issue 12 https://doi.org/10.1109/LED.2016.2623423	journal	December 2016
Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes Hiyoshi, Toru; Hori, Tsutomu; Suda, Jun IEEE Transactions on Electron Devices, Vol. 55, Issue 8 https://doi.org/10.1109/TED.2008.926643	journal	August 2008
Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC Feng, Gan; Suda, Jun; Kimoto, Tsunenobu IEEE Transactions on Electron Devices, Vol. 59, Issue 2 https://doi.org/10.1109/TED.2011.2175486	journal	February 2012
A Highly Effective Edge Termination Design for SiC Planar High Power Devices Pérez, R.; Mestres, Narcis; Blanqué, Servane Materials Science Forum, Vol. 457-460 https://doi.org/10.4028/www.scientific.net/MSF.457-460.1253	journal	June 2004
Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices Bolotnikov, Alexander; Losee, Peter A.; Deeb, Peter Materials Science Forum, Vol. 858 https://doi.org/10.4028/www.scientific.net/MSF.858.737	journal	May 2016

Similar Records

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

Journal Article · Sun Oct 30 20:00:00 EDT 2016 · IEEE Electron Device Letters · OSTI ID:2440205

Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications

Journal Article · Sun Oct 13 20:00:00 EDT 2019 · IEEE Journal of Emerging and Selected Topics in Power Electronics · OSTI ID:1799219

Related Subjects

42 ENGINEERING
4H-Silicon Carbide (4H-SiC)
JTE
edge termination
floating field ring (FFR)
guard ring
junction termination extension (JTE)
silicon carbide

A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

Citation Formats

References (10)

Similar Records

Related Subjects