A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

Sung, Woongje; Baliga, B. J.

doi:10.1109/led.2016.2623423

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

Journal Article · Mon Oct 31 00:00:00 EDT 2016 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2016.2623423· OSTI ID:2440205

^[1]; Baliga, B. J. ^[2]

The State University of New York Polytechnic Institute, Albany, NY (United States); University at Albany
North Carolina State University, Raleigh, NC (United States)

This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE. Based on the parameters of the drift layer specified by the wafer vendor, the measured breakdown voltage of the fabricated p-i-n diode using the Hybrid-JTE is as high as 5450 V, which is close (~99%) of the ideal parallel plane p-n junction. As a result, measured breakdown voltages from randomly chosen 32 p-i-n diodes across the wafer show very tight distribution: 29 diodes provide breakdown voltages higher than 5000 V at 100 μA.

Research Organization:: North Carolina State University, Raleigh, NC (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006521

OSTI ID:: 2440205

Alternate ID(s):: OSTI ID: 2440207

Journal Information:: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 12 Vol. 37; ISSN 0741-3106

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

42 ENGINEERING
4H-SiC
Silicon carbide
edge termination
floating field rings
junction termination extension

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

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