Ablation loading of barium ions into a surface-electrode trap
- Massachusetts Institute of Technology, Cambridge, MA (United States)
- Massachusetts Institute of Technology, Lexington, MA (United States); Massachusetts Institute of Technology, Cambridge, MA (United States)
Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g., due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here, we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We characterize loading of ablated barium from a metallic source in two cryogenic surface-electrode traps with 730 and 50 μm ion-electrode distances. Furthermore, our loading rate agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing.
- Research Organization:
- Oak Ridge Institute for Science and Education (ORISE), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); U.S. Army Research Office
- Grant/Contract Number:
- SC0014664
- OSTI ID:
- 2425574
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 122; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Laser ablation loading of a surface-electrode ion trap
Single-qubit-gate error below 10{sup -4} in a trapped ion
Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap
Journal Article
·
Wed Nov 14 23:00:00 EST 2007
· Physical Review. A
·
OSTI ID:21028115
Single-qubit-gate error below 10{sup -4} in a trapped ion
Journal Article
·
Thu Sep 15 00:00:00 EDT 2011
· Physical Review. A
·
OSTI ID:22068607
Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap
Journal Article
·
Tue Jun 15 00:00:00 EDT 2010
· Physical Review. A
·
OSTI ID:21407925