Switching limits of top-gated carbon nanotube field-effect transistors

Sanchez-Soares, Alfonso; Gilardi, C.; Lin, Q.; Kelly, T.; Su, S. -K.; Fagas, G.; Greer, J. C.; Pitner, G.; Chen, E.

doi:10.1016/j.sse.2023.108624

Switching limits of top-gated carbon nanotube field-effect transistors

Journal Article · Fri Feb 24 00:00:00 EST 2023 · Solid-State Electronics

DOI:https://doi.org/10.1016/j.sse.2023.108624· OSTI ID:2424624

^[1]; Gilardi, C. ^[2]; Lin, Q. ^[2]; Kelly, T. ^[1]; Su, S. -K. ^[3]; Fagas, G. ^[4]; Greer, J. C. ^[5]; Pitner, G. ^[6]; Chen, E. ^[3]

EOLAS Designs, Grenagh, Cork (Ireland)
Stanford Univ., CA (United States)
Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu (Taiwan)
University College Cork (Ireland)
Univ. of Nottingham, Ningbo (China)
Taiwan Semiconductor Manufacturing Company (TSMC), San Jose, CA (United States)

The performance limits of carbon nanotube field-effect transistors (CNFETs) based on a recently reported process are studied by computational techniques at temperatures between 300 K and 4 K. Here, the impact of band-to-band tunneling (BTBT) and source-to-drain tunneling (SDT) is examined for devices with varying gate length through the use of simulations based on the non-equilibrium Green’s function (NEGF) formalism, and calibrated to measurements. Additionally, the case of junctionless chemical doping profiles is analyzed in contrast to electrostatic doping recently reported for test structures. The switching limits of CNFETs are further explored for devices based on carbon nanotubes (CNTs) with more favorable electronic structures.

Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); USDOE

OSTI ID:: 2424624

Journal Information:: Solid-State Electronics, Journal Name: Solid-State Electronics Journal Issue: C Vol. 202; ISSN 0038-1101

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (10)

VLSI-Compatible Carbon Nanotube Doping Technique with Low Work-Function Metal Oxides Suriyasena Liyanage, Luckshitha; Xu, Xiaoqing; Pitner, Greg Nano Letters, Vol. 14, Issue 4 https://doi.org/10.1021/nl404654j	journal	March 2014
Nanowire transistors without junctions Colinge, Jean-Pierre; Lee, Chi-Woo; Afzalian, Aryan Nature Nanotechnology, Vol. 5, Issue 3 https://doi.org/10.1038/nnano.2010.15	journal	February 2010
Chemical doping of individual semiconducting carbon-nanotube ropes Bockrath, Marc; Hone, J.; Zettl, A. Physical Review B, Vol. 61, Issue 16 https://doi.org/10.1103/PhysRevB.61.R10606	journal	April 2000
Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length Pitner, G.; Zhang, Z.; Lin, Q. 2020 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM13553.2020.9371899	conference	December 2020
Modeling of Nanoscale Devices Anantram, M. P.; Lundstrom, M. S.; Nikonov, D. E. Proceedings of the IEEE, Vol. 96, Issue 9 https://doi.org/10.1109/JPROC.2008.927355	journal	September 2008
Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs Lin, Qing; Pitner, Gregory; Gilardi, Carlo IEEE Electron Device Letters, Vol. 43, Issue 3 https://doi.org/10.1109/LED.2022.3141692	journal	March 2022
A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors Guo, J.; Datta, S.; Lundstrom, M. IEEE Transactions on Electron Devices, Vol. 51, Issue 2 https://doi.org/10.1109/TED.2003.821883	journal	February 2004
Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors Koswatta, S. O.; Hasan, S.; Lundstrom, M. S. IEEE Transactions on Electron Devices, Vol. 54, Issue 9 https://doi.org/10.1109/TED.2007.902900	journal	September 2007
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI Hills, Gage; Bardon, Marie Garcia; Doornbos, Gerben IEEE Transactions on Nanotechnology, Vol. 17, Issue 6 https://doi.org/10.1109/TNANO.2018.2871841	journal	November 2018
Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement Lyu, Jong-Son; Lee, Kee-Soo Nam Japanese Journal of Applied Physics, Vol. 32, Issue 10R https://doi.org/10.1143/JJAP.32.4393	journal	October 1993

Similar Records

Gate Control Coefficient Effect on CNFET Characteristic

Journal Article · Mon Jun 01 00:00:00 EDT 2009 · AIP Conference Proceedings · OSTI ID:21304980

Exploration of vertical scaling limit in carbon nanotube transistors

Journal Article · Mon May 09 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:22591719

Tunable doping of carbon nanotubes through engineered atomic layer deposition

Patent · Mon Nov 27 23:00:00 EST 2023 · OSTI ID:2293932

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
Carbon nanotubes
Engineering
MOSFET
NEGF
Physics

Switching limits of top-gated carbon nanotube field-effect transistors

Citation Formats

References (10)

Similar Records

Related Subjects