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Tunable doping of carbon nanotubes through engineered atomic layer deposition

Patent ·
OSTI ID:2293932

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Number(s):
11,832,458
Application Number:
17/211,329
OSTI ID:
2293932
Country of Publication:
United States
Language:
English

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