High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

Journal Article · Mon Aug 11 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892918· OSTI ID:22318010

Liang, Shibo; Zhang, Zhiyong; Si, Jia; Zhong, Donglai; Peng, Lian-Mao ^[1]

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1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

• OSTI ID: 22318010
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
CARBON NANOTUBES
FIELD EFFECT TRANSISTORS
METALS
PERFORMANCE
SEMICONDUCTOR MATERIALS
YTTRIUM OXIDES