Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Kemelbay,; Tikhonov,; Aloni,; Kuykendall,

doi:10.3390/nano9081085

Title: Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Journal Article · Sun Jul 28 00:00:00 EDT 2019 · Nanomaterials

DOI:https://doi.org/10.3390/nano9081085· OSTI ID:1545395

Kemelbay,; Tikhonov,; Aloni,; Kuykendall,

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs- which offer the best switching performance-deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites-especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; BR05236454; 090118FD5346

OSTI ID:: 1545395

Alternate ID(s):: OSTI ID: 1628512; OSTI ID: 1650067

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Vol. 9 Journal Issue: 8; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: Switzerland

Language:: English

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Cited by: 4 works

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