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Title: Exploration of vertical scaling limit in carbon nanotube transistors

Abstract

Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4.5 nm or thinner) atomic-layer-deposition grown HfO{sub 2} as gate insulator, and shown to exhibit high gate efficiency, i.e., all examined (totally 76) devices present very low room temperature subthreshold swing with an averaged value of 64 mV/Dec, without observable carrier mobility degradation. The gate leakage of the CNT FET under fixed gate voltage is dependent not only on the thickness of HfO{sub 2} insulator, but also on the diameter of the CNT. The vertical scaling limit of CNT FETs is determined by gate leakage standard in ultra large scale integrated circuits. HfO{sub 2} film with effective oxide thickness of 1.2 nm can provide both excellent gate electrostatic controllability and small gate leakage for sub-5 nm FETs based on CNT with small diameter.

Authors:
; ; ; ; ;  [1]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22591719
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 19; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; CARRIER MOBILITY; DEPOSITION; EFFICIENCY; ELECTRIC POTENTIAL; EQUIPMENT; FIELD EFFECT TRANSISTORS; FILMS; HAFNIUM OXIDES; INTEGRATED CIRCUITS; LAYERS; LEAKS; TEMPERATURE RANGE 0273-0400 K; THICKNESS

Citation Formats

Qiu, Chenguang, Zhang, Zhiyong, Yang, Yingjun, Xiao, Mengmeng, Ding, Li, and Peng, Lian-Mao. Exploration of vertical scaling limit in carbon nanotube transistors. United States: N. p., 2016. Web. doi:10.1063/1.4949336.
Qiu, Chenguang, Zhang, Zhiyong, Yang, Yingjun, Xiao, Mengmeng, Ding, Li, & Peng, Lian-Mao. Exploration of vertical scaling limit in carbon nanotube transistors. United States. doi:10.1063/1.4949336.
Qiu, Chenguang, Zhang, Zhiyong, Yang, Yingjun, Xiao, Mengmeng, Ding, Li, and Peng, Lian-Mao. Mon . "Exploration of vertical scaling limit in carbon nanotube transistors". United States. doi:10.1063/1.4949336.
@article{osti_22591719,
title = {Exploration of vertical scaling limit in carbon nanotube transistors},
author = {Qiu, Chenguang and Zhang, Zhiyong and Yang, Yingjun and Xiao, Mengmeng and Ding, Li and Peng, Lian-Mao},
abstractNote = {Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4.5 nm or thinner) atomic-layer-deposition grown HfO{sub 2} as gate insulator, and shown to exhibit high gate efficiency, i.e., all examined (totally 76) devices present very low room temperature subthreshold swing with an averaged value of 64 mV/Dec, without observable carrier mobility degradation. The gate leakage of the CNT FET under fixed gate voltage is dependent not only on the thickness of HfO{sub 2} insulator, but also on the diameter of the CNT. The vertical scaling limit of CNT FETs is determined by gate leakage standard in ultra large scale integrated circuits. HfO{sub 2} film with effective oxide thickness of 1.2 nm can provide both excellent gate electrostatic controllability and small gate leakage for sub-5 nm FETs based on CNT with small diameter.},
doi = {10.1063/1.4949336},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}