Device simulation of charge collection and single-event upset
Journal Article
·
· IEEE Transactions on Nuclear Science
- Sandia National Lab., Albuquerque, NM (United States)
In this paper the author reviews the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. The author presents an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. He examines unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM`s), and SEU in static random access memories (SRAM`s). The author concludes with a few thoughts on future issues likely to confront the SEU device modeler.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 242435
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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