Role of step and terrace nucleation in heteroepitaxial growth morphology: growth kinetics of CaF{sub 2}/Si(111)
Journal Article
·
· Physical Review Letters
- Department of Physics, University of Washington, Box 35-1560, Seattle, Washington 98195-1560 (United States)
The thickness uniformity and the spatial distribution of lattice relaxation in thin ({lt}8 nm) CaF{sub 2}/Si(111) films, observed with photoelectron spectroscopy and transmission electron microscopy, are seen to depend strongly on the initial nucleation kinetics. We develop a general model for heteroepitaxial growth that explains both these and literature results. Terrace or step nucleation leads to laminar films, although with different relaxation patterns; combined step and terrace nucleation leads to rough films due to different upper-layer nucleation rates on the differently sized islands.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098; FG06-94ER45516
- OSTI ID:
- 239435
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 75; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth kinetics of CaF[sub 2]/Si(111) heteroepitaxy: An x-ray photoelectron diffraction study
Variable growth modes of CaF[sub 2] on Si(111) determined by x-ray photoelectron diffraction
Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology
Journal Article
·
Tue Feb 14 23:00:00 EST 1995
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:6604411
Variable growth modes of CaF[sub 2] on Si(111) determined by x-ray photoelectron diffraction
Journal Article
·
Mon Apr 26 00:00:00 EDT 1993
· Applied Physics Letters; (United States)
·
OSTI ID:6677635
Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology
Journal Article
·
Mon Nov 14 23:00:00 EST 2011
· Journal of Applied Physics
·
OSTI ID:22036766