Variable growth modes of CaF[sub 2] on Si(111) determined by x-ray photoelectron diffraction

Journal Article · Mon Apr 26 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109478· OSTI ID:6677635

Denlinger, J D; Rotenberg, E ^[1]; Hessinger, U; Leskovar, M ^[2]; Olmstead, M A ^[3]

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1. Department of Physics, University of California, Berkeley, California 94720 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Department of Physics FM-15, University of Washington, Seattle, Washington 98195 (United States)
3. Department of Physics FM-15, University of Washington, Seattle, Washington 98195 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

Chemical discrimination of bulk and interface Ca 2[ital p] x-ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF[sub 2] epitaxy on Si(111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca-F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaF[sub 2] interface layer that results in immediate wetting and laminar growth.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6677635
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:17; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360601 -- Other Materials-- Preparation & Manufacture
ALKALINE EARTH METAL COMPOUNDS
CALCIUM COMPOUNDS
CALCIUM FLUORIDES
CALCIUM HALIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
EPITAXY
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
INTERFACES
MICROSTRUCTURE
PHOTOELECTRON SPECTROSCOPY
SCATTERING
SPECTROSCOPY
TEMPERATURE EFFECTS
VAPOR PHASE EPITAXY
WETTABILITY