Temperature-dependent growth mechanisms of CaF{sub 2} on Si(111)

Journal Article · Wed Sep 01 04:00:00 EDT 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1782636· OSTI ID:20636583

Wang, C R; Mueller, B H; Bugiel, E; Hofmann, K R ^[1]

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1. Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstrasse 11A, 30167 Hannover (Germany)

The molecular-beam epitaxy of CaF{sub 2} layers on Si(111) substrates was studied in the temperature range between 370 and 700 deg. C. A strong temperature dependence of the CaF{sub 2} surface morphology was found. Layer-by-layer growth modes were found in two temperature ranges: (i) between 430 and 490 deg. C, where growth of atomically flat CaF{sub 2} epilayers occurred, and (ii) at {approx}700 deg. C, where a step flow mode resulted in a relatively smooth CaF{sub 2} surface containing some rough regions, possibly due to the thermal decomposition of the interface layer. At {approx}540 deg. C, the triangular island shape observed at lower growth temperatures changed to a more hexagonal shape expected for thermodynamic equilibrium, but the top monolayer islands still exhibited a triangular shape, which can be attributed to a relatively higher lateral adatom impingement rate per unit length of island perimeter. The mechanisms of the complex temperature-dependent growth behavior are discussed in detail.

• OSTI ID: 20636583
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 5 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CALCIUM FLUORIDES
CRYSTAL GROWTH
MOLECULAR BEAM EPITAXY
SILICON
SURFACE PROPERTIES
SURFACES
TEMPERATURE DEPENDENCE