Interface chemistry and epitaxial growth modes of SrF{sub 2} on Si(001)

Journal Article · Thu Feb 15 04:00:00 EST 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.75.075403· OSTI ID:20976701

Pasquali, L ^[1]; Suturin, S M; Kaveev, A K; Ulin, V P; Sokolov, N S ^[2]; Doyle, B P ^[3]; Nannarone, S ^[1]

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1. Dipartimento di Ingegneria dei Materiali e dell'Ambiente, Universita di Modena e Reggio Emilia, Via Vignolese 905, 41100-Modena (Italy)
2. RAS, Solid State Optics Department, Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St. Petersburg, (Russian Federation)
3. INFM-CNR-TASC Laboratory, s.s. 14, km 163.5 in AREA Science Park, 34012 Basovizza (Italy)

Molecular beam epitaxy has been used to grow SrF{sub 2} thin films on Si(001). The growth modes have been investigated by atomic force microscopy, electron diffraction, and photoemission. Two principal growth regimes have been identified: (i) when deposition is carried out with the substrate held at a temperature of 700-750 deg. C, SrF{sub 2} molecules react with the substrate giving rise to a Sr-rich wetting layer on top of which three dimensional bulklike fluoride ridges develop; (ii) when deposition is carried out with the substrate held at 400 deg. C, a nanopatterned film forms with characteristic triangular islands. Results are compared to the growth mode of CaF{sub 2} on Si(001) under analogous deposition conditions. Morphological and structural differences between the two systems are associated with the larger lattice parameter of SrF{sub 2} with respect to CaF{sub 2}, resulting in a larger mismatch with the Si substrate.

• OSTI ID: 20976701
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 75; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CALCIUM FLUORIDES
DEPOSITION
ELECTRON DIFFRACTION
INTERFACES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SILICON
STRONTIUM FLUORIDES
SUBSTRATES
SURFACES
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS