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Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs

Conference ·
OSTI ID:238436
; ;  [1];  [2];  [3];  [4]
  1. Arizona Univ., Tucson, AZ (United States), Dept. of ECE
  2. Sandia National Labs., Albuquerque, NM (United States)
  3. RLP Research, Inc., Albuquerque, NM (United States)
  4. Naval Surface Warfare Center, Crane, IN (United States). Crane Div.
+ Show Author Affiliations

The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
238436
Report Number(s):
SAND--96-0564C; CONF-960773--3; ON: DE96006385
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GAIN
INTEGRATED CIRCUITS
IONIZING RADIATIONS
JUNCTION TRANSISTORS
OXIDES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
TRAPPING