Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs
- Univ. of Arizona, Tucson, AZ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- RLP Research, Inc., Albuquerque, NM (United States)
- Naval Surface Warfare Center, Crane, IN (United States)
A comparison is presented of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNPs. The dose-rate dependent of current gain degradation in lateral PNP BJTs is even stronger than the dependence previously reported for NPN BJTs. Various mechanisms are presented and their relative significance for gain degradation in the lateral, substrate, and vertical PNPs is discussed. A detailed comparison of the lateral and substrate PNP devices is given. The specific lateral and substrate devices considered here are fabricated in the same process and possess identical emitters. Even though these devices have identical emitters and undergo the same processing steps, the lateral devices degrade significantly more than the substrate devices.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 203671
- Report Number(s):
- CONF-950716-; ISSN 0018-9499; TRN: 96:009630
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 42, Issue 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
- Country of Publication:
- United States
- Language:
- English
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