Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

Journal Article · Fri Dec 01 04:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488748· OSTI ID:203671

Schmidt, D M; Schrimpf, R D; Graves, R J; Johnson, G H; Galloway, K F ^[1]; Fleetwood, D M ^[2]; Pease, R L ^[3]; Combs, W E ^[4]

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1. Univ. of Arizona, Tucson, AZ (United States)
2. Sandia National Labs., Albuquerque, NM (United States)
3. RLP Research, Inc., Albuquerque, NM (United States)
4. Naval Surface Warfare Center, Crane, IN (United States)

A comparison is presented of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNPs. The dose-rate dependent of current gain degradation in lateral PNP BJTs is even stronger than the dependence previously reported for NPN BJTs. Various mechanisms are presented and their relative significance for gain degradation in the lateral, substrate, and vertical PNPs is discussed. A detailed comparison of the lateral and substrate PNP devices is given. The specific lateral and substrate devices considered here are fabricated in the same process and possess identical emitters. Even though these devices have identical emitters and undergo the same processing steps, the lateral devices degrade significantly more than the substrate devices.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 203671
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPARATIVE EVALUATIONS
IONIZING RADIATIONS
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES