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Title: Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs

Abstract

The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. Arizona Univ., Tucson, AZ (United States), Dept. of ECE
  2. Sandia National Labs., Albuquerque, NM (United States)
  3. RLP Research, Inc., Albuquerque, NM (United States)
  4. Naval Surface Warfare Center, Crane, IN (United States). Crane Div.
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
OSTI Identifier:
238436
Report Number(s):
SAND-96-0564C; CONF-960773-3
ON: DE96006385; TRN: 96:015029
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: [1996]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 36 MATERIALS SCIENCE; JUNCTION TRANSISTORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; GAIN; INTEGRATED CIRCUITS; IONIZING RADIATIONS; TRAPPING; OXIDES

Citation Formats

Schmidt, D M, Wu, A, Schrimpf, R D, Fleetwood, D M, Pease, R L, and Combs, W E. Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs. United States: N. p., 1996. Web.
Schmidt, D M, Wu, A, Schrimpf, R D, Fleetwood, D M, Pease, R L, & Combs, W E. Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs. United States.
Schmidt, D M, Wu, A, Schrimpf, R D, Fleetwood, D M, Pease, R L, and Combs, W E. 1996. "Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs". United States. https://www.osti.gov/servlets/purl/238436.
@article{osti_238436,
title = {Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs},
author = {Schmidt, D M and Wu, A and Schrimpf, R D and Fleetwood, D M and Pease, R L and Combs, W E},
abstractNote = {The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge.},
doi = {},
url = {https://www.osti.gov/biblio/238436}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Mar 01 00:00:00 EST 1996},
month = {Fri Mar 01 00:00:00 EST 1996}
}

Conference:
Other availability
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