Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

Titze, Michael; Katzenmeyer, Aaron; Frisone, Sam; Ohlhausen, James A.; Flores, Anthony; Campbell, DeAnna; Li, Bingjun; Wang, Yongqiang; Han, Jung; Bielejec, Edward S.; Goldman, Rachel S.

doi:10.1063/5.0198791

Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

Journal Article · Thu Apr 18 00:00:00 EDT 2024 · AIP Advances

DOI:https://doi.org/10.1063/5.0198791· OSTI ID:2345286

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Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Univ. of Michigan, Ann Arbor, MI (United States)
Yale Univ., New Haven, CT (United States)
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN. We consider GaMg, MgSO₄$$\bullet$$7H₂O, MgZn, AlMg, and AuMgSi alloys. Although issues of oxidation (GaMg), decomposition (MgSO₄$$\bullet$$7H₂O), and excessive vapor pressure (MgZn and AlMg) were encountered, the AuMgSi alloy LMAIS operating in a Wien-filtered FIB column emits all Mg isotopes in singly and doubly charged ionization states. We discuss the operating conditions to achieve <20 nm spot size Mg FIB implantation and present Mg depth profile data from time-of-flight secondary ion mass spectrometry. We also provide insight into implantation damage and recovery based on cathodoluminescence spectroscopy before and after rapid thermal processing. Prospects for incorporating the Mg LMAIS into high-power electronic device fabrication are also discussed.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA); USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: NA0003525; AR0000871

OSTI ID:: 2345286

Report Number(s):: SAND--2024-05590J

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 4 Vol. 14; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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