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Secondary-electron imaging of bulk crystalline specimens in an aberration corrected $$\text{STEM}$$

Journal Article · · Ultramicroscopy
 [1];  [2];  [1];  [1];  [3];  [2]
  1. Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  2. Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics
  3. University of Alberta, Edmonton, AB (Canada)
Atomic-scale electron microscopy traditionally probes thin specimens, with thickness below 100 nm, and its feasibility for bulk samples has not been documented. Here in this study, we explore the practicality of scanning transmission electron microscope (STEM) imaging with secondary electrons (SE), using a silicon-wedge specimen having a maximum thickness of 18 μm. We find that the atomic structure is present in the entire thickness range of the SE images although the background intensity increases moderately with thickness. The consistent intensity of secondary electron (SE) images at atomic positions and the modest increase in intensity in between (background) observed in silicon suggest a limited contribution from SEs generated by backscattered electrons, a conclusion supported by our multislice calculations. We conclude that achieving atomic resolution in SE imaging for bulk specimens is indeed attainable using aberration-corrected STEM and that an aberration-corrected scanning electron microscope (SEM) may have the capacity for atomic-level resolution, holding great promise for future strides in materials research.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
=; Natural Sciences and Engineering Research Council of Canada; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0012704
OSTI ID:
2338119
Alternate ID(s):
OSTI ID: 2369970
Report Number(s):
BNL--225487-2024-JAAM
Journal Information:
Ultramicroscopy, Journal Name: Ultramicroscopy Vol. 261; ISSN 0304-3991
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (12)

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Surface damage formation during ion-beam thinning of samples for transmission electron microscopy journal April 2001
Local thickness measurement through scattering contrast and electron energy-loss spectroscopy journal January 2012
Atomic imaging using secondary electrons in a scanning transmission electron microscope: Experimental observations and possible mechanisms journal June 2011
Image simulation for atomic resolution secondary electron image journal December 2012
High-Energy Electron Scattering in Thick Samples Evaluated by Bright-Field Transmission Electron Microscopy, Energy-Filtering Transmission Electron Microscopy, and Electron Tomography journal March 2022
Surface determination through atomically resolved secondary-electron imaging journal June 2015
Imaging single atoms using secondary electrons with an aberration-corrected electron microscope journal September 2009
W(310) cold-field emission characteristics reflecting the vacuum states of an extreme high vacuum electron gun journal January 2013
Spatial resolution in secondary-electron microscopy journal May 2022
Secondary electron imaging at atomic resolution using a focused coherent electron probe journal February 2013

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