Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

Koukourinkova, S. D.; Colon, A.; Doyle, B. L.; Vizkelethy, G.; Pickrell, G. W.; Gunning, B. P.; Kropka, K. E.; Bielejec, E. S.; Wampler, W. R.

doi:10.1109/tns.2023.3257768

Title: Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

Journal Article · Thu Mar 16 00:00:00 EDT 2023 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2023.3257768· OSTI ID:2317747

^[1]; Colon, A. ^[1]; Doyle, B. L. ^[1];

^[1];

^[2]; Kropka, K. E. ^[1];

^[1]; Wampler, W. R. ^[3]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sandia National Laboratories, Albuquerque, NM, USA
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Micron Technology, Inc., Boise, ID (United States)

Radiation-hard high-voltage vertical GaN p-n diodes are being developed for use in power electronics subjected to ionizing radiation. Here, we present a comparison of the measured and simulated photocurrent response of diodes exposed to ionizing irradiation with 70 keV and 20 MeV electrons at dose rates in the range of 1.4x10⁷ - 5.0x10⁸ rad(GaN)/s. The simulations correctly predict the trend in measured steady-state photocurrent and agree with experimental results within a factor of 2. Furthermore, simulations of the transient photocurrent response to dose rates with uniform and non-uniform ionization depth profiles uncover the physical processes involved that cannot be otherwise experimentally observed due to orders of magnitude larger RC time constant of the test circuit. The simulations were performed using an Exploratory Physics Development code developed at Sandia National Laboratories. The code offers the capability to include defect physics under more general conditions, not included in commercially available software packages, extending the applicability of the simulations to different types of radiation environments.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2317747

Report Number(s):: SAND-2024-02313J

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 70, Issue 4; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (26)

Modeling and simulation of bulk gallium nitride power semiconductor devices Sabui, G.; Parbrook, P. J.; Arredondo-Arechavala, M. AIP Advances, Vol. 6, Issue 5 https://doi.org/10.1063/1.4948794	journal	May 2016
First-principles calculations for defects and impurities: Applications to III-nitrides Van de Walle, Chris G.; Neugebauer, Jörg Journal of Applied Physics, Vol. 95, Issue 8 https://doi.org/10.1063/1.1682673	journal	April 2004
An extended ambipolar model: Formulation, analytical investigations, and application to photocurrent modeling Ishaque, A. N.; Howard, J. W.; Becker, M. Journal of Applied Physics, Vol. 69, Issue 1 https://doi.org/10.1063/1.347714	journal	January 1991
Fine Structure of the Carbon-Related Blue Luminescence Band in GaN Reshchikov, Michael A. Solids, Vol. 3, Issue 2 https://doi.org/10.3390/solids3020016	journal	April 2022
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure Kolník, Ján; Oğuzman, İsmail H.; Brennan, Kevin F. Journal of Applied Physics, Vol. 78, Issue 2 https://doi.org/10.1063/1.360405	journal	July 1995
Impact ionization coefficients and critical electric field in GaN Maeda, Takuya; Narita, Tetsuo; Yamada, Shinji Journal of Applied Physics, Vol. 129, Issue 18 https://doi.org/10.1063/5.0050793	journal	May 2021
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE Ciarkowski, Timothy; Allen, Noah; Carlson, Eric Materials, Vol. 12, Issue 15 https://doi.org/10.3390/ma12152455	journal	August 2019
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Zhang, Yuxuan; Chen, Zhaoying; Li, Wenbo Journal of Applied Physics, Vol. 127, Issue 21 https://doi.org/10.1063/5.0008758	journal	June 2020
Transport Parameters for Electrons and Holes Bellotti, Enrico; Bertazzi, Francesco Nitride Semiconductor Devices: Principles and Simulation https://doi.org/10.1002/9783527610723.ch4	book	January 2007
Photocurrent modeling of modern microcircuit pn junctions Enlow, E. W.; Alexander, D. R. IEEE Transactions on Nuclear Science, Vol. 35, Issue 6 https://doi.org/10.1109/23.25482	journal	January 1988
Ionization Rates for Electrons and Holes in Silicon Chynoweth, A. G. Physical Review, Vol. 109, Issue 5 https://doi.org/10.1103/physrev.109.1537	journal	March 1958
Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices Fjeldly, T. A.; Deng, Y.; Shur, M. S. IEEE Transactions on Nuclear Science, Vol. 48, Issue 5 https://doi.org/10.1109/23.960363	journal	October 2001
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Cao, Lina; Wang, Jingshan; Harden, Galen Applied Physics Letters, Vol. 112, Issue 26 https://doi.org/10.1063/1.5031785	journal	June 2018
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition Piao, Guanxi; Ikenaga, Kazutada; Yano, Yoshiki Journal of Crystal Growth, Vol. 456 https://doi.org/10.1016/j.jcrysgro.2016.08.030	journal	December 2016
Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide Wampler, William R.; Myers, Samuel M. Journal of Applied Physics, Vol. 117, Issue 4 https://doi.org/10.1063/1.4906104	journal	January 2015
Iron as a source of efficient Shockley-Read-Hall recombination in GaN Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E. Applied Physics Letters, Vol. 109, Issue 16 https://doi.org/10.1063/1.4964831	journal	October 2016
Photoexcited carrier trapping and recombination at Fe centers in GaN Uždavinys, T. K.; Marcinkevičius, S.; Leach, J. H. Journal of Applied Physics, Vol. 119, Issue 21 https://doi.org/10.1063/1.4953219	journal	June 2016
Modeling the time-dependent transient radiation response of semiconductor junctions Wunsch, T. F.; Axness, C. L. IEEE Transactions on Nuclear Science, Vol. 39, Issue 6 https://doi.org/10.1109/23.211417	journal	January 1992
PENELOPE: An algorithm for Monte Carlo simulation of the penetration and energy loss of electrons and positrons in matter Baró, J.; Sempau, J.; Fernández-Varea, J. M. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 100, Issue 1 https://doi.org/10.1016/0168-583x(95)00349-5	journal	May 1995
Model of defect reactions and the influence of clustering in pulse-neutron-irradiated Si Myers, S. M.; Cooper, P. J.; Wampler, W. R. Journal of Applied Physics, Vol. 104, Issue 4 https://doi.org/10.1063/1.2963697	journal	August 2008
Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes King, M. P.; Kaplar, R. J.; Dickerson, J. R. Applied Physics Letters, Vol. 109, Issue 18 https://doi.org/10.1063/1.4966903	journal	October 2016
Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes Wampler, W. R.; Armstrong, A. M.; Vizkelethy, G. Journal of Applied Physics, Vol. 132, Issue 9 https://doi.org/10.1063/5.0106905	journal	September 2022
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures Ji, Dong; Ercan, Burcu; Chowdhury, Srabanti Applied Physics Letters, Vol. 115, Issue 7 https://doi.org/10.1063/1.5099245	journal	August 2019
High voltage and high current density vertical GaN power diodes Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M. Electronics Letters, Vol. 52, Issue 13 https://doi.org/10.1049/el.2016.1156	journal	June 2016
Transient Radiation Current Generator Model for Semiconductor Devices Dierking, W. H.; Katz, G. E.; Steele, E. L. IEEE Transactions on Nuclear Science, Vol. 16, Issue 6 https://doi.org/10.1109/tns.1969.4325518	journal	January 1969
Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model Myers, Samuel M.; Wampler, William R.; Modine, Normand A. Journal of Applied Physics, Vol. 120, Issue 13 https://doi.org/10.1063/1.4963873	journal	October 2016

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dose rate effects
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Title: Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

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