Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

Wampler, W. R.; Armstrong, A. M.; Vizkelethy, G.

doi:10.1063/5.0106905

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

Journal Article · Thu Sep 01 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0106905· OSTI ID:1887395

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Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security

Grant/Contract Number:: NA0003525

OSTI ID:: 1887395

Alternate ID(s):: OSTI ID: 1885054

Report Number(s):: SAND2022-11403J; 709263

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 132; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

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