Vertical GaN power diodes with a bilayer edge termination

Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

doi:10.1109/TED.2015.2502186

Vertical GaN power diodes with a bilayer edge termination

Journal Article · Mon Dec 07 00:00:00 EST 2015 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/TED.2015.2502186· OSTI ID:1236482

Dickerson, Jeramy R. ^[1]; Allerman, Andrew A. ^[1]; Bryant, Benjamin N. ^[2]; Fischer, Arthur J. ^[1]; King, Michael P. ^[1]; Moseley, Michael W. ^[1]; Armstrong, Andrew M. ^[1]; Kaplar, Robert J. ^[1]; Kizilyalli, Isik C. ^[2]; Aktas, Ozgur ^[2]; Wierer, Jr., Jonathan J. ^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Avogy Inc., San Jose, CA (United States)
Lehigh Univ., Bethlehem, PA (United States)

Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (10⁴ - 10⁵ cm^-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 10¹⁵ cm^-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1236482

Report Number(s):: SAND--2015-7150J; 603200

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 1 Vol. 63; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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avalanche breakdown
gallium nitride
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powder semiconductor devices

Vertical GaN power diodes with a bilayer edge termination

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