Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

Journal Article · Fri Dec 02 00:00:00 EST 2016 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2016.11.031· OSTI ID:1338314

Vizkelethy, G. ^[1]; King, M. P. ^[1]; Aktas, O. ^[2]; Kizilyalli, I. C. ^[2]; Kaplar, R. J. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Avogy, Inc., San Jose, CA (United States)

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1338314
• Alternate ID(s): OSTI ID: 1373150; OSTI ID: 22903647
• Report Number(s): SAND--2016-7133J; PII: S0168583X16305092
• Journal Information: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; ISSN 0168-583X
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
GaN
IBIC
displacement damage