Synthesis and characterization of co-deposited carbon nitride and boron materials
Conference
·
OSTI ID:230174
- Univ. of Houston, TX (United States); and others
Carbon boron nitride (CBN) thin films were grown on Si and NaCl at temperatures in the range of 100-400{degrees}C using electron-beam evaporation of graphite and boron assisted with electron cyclotron resonance (ECR) plasma generated nitrogen species. The effect of varying the boron flux on the compositional, structural, and electrical properties of the films was investigated using electron probe microanalysis (EPMA), Auger depth profiling (ADP), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and Hall measurements.
- OSTI ID:
- 230174
- Report Number(s):
- CONF-950840--; CNN: Grant NAGW977; Grant ARP-00365224
- Country of Publication:
- United States
- Language:
- English
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