Synthesis of Cubic Boron Nitride Thin Films on Silicon Substrate Using Electron Beam Evaporation

Journal Article · Fri Sep 09 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2063010· OSTI ID:20719272

Nasrazadani, S; Vemuri, P ^[1]

---

1. Engineering Technology Department, University of North Texas, Denton Texas, 76207 (United States)

This paper deals with the synthesis of cubic phase of boron nitride on Si (100) wafers using electron beam evaporator. Four sets of samples have been deposited by varying substrate temperature and the deposition time. Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Photoelectron Spectroscopy (XPS), and Fourier Transform Infrared Spectroscopy (FTIR) techniques have been used to determine the structure and composition of the films deposited. It was found that deposition at substrate temperature of 400 deg. C and for a period of one hour yielded high quality cubic boron nitride films.

• OSTI ID: 20719272
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 788; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
BORON NITRIDES
DEPOSITION
ELECTRON BEAMS
EVAPORATION
FOURIER TRANSFORM SPECTROMETERS
INFRARED SPECTRA
SCANNING ELECTRON MICROSCOPY
SILICON
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY