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Phase evolution in boron nitride thin films

Journal Article · · Journal of Materials Research; (United States)
; ;  [1];  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. High Temperature Materials Laboratory, Mailstop 6064, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064 (United States)

Boron nitride (BN) thin films were deposited on monocrystalline Si (100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated using Fourier transform infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). These techniques revealed the consecutive deposition of an initial 20 A thick layer of amorphous BN, 20--50 A of hexagonal BN having a layered structure, and a final layer of the cubic phase. The growth sequence of the layers is believed to result primarily from increasing biaxial compressive stresses. Favorable surface and interface energy and crystallographic relationships may also assist in the nucleation of the cubic and the hexagonal phases, respectively. The presence of the amorphous and hexagonal regions explains why there have been no reports of the growth of 100% cubic boron nitride on Si.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
6206463
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 8:6; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English