Effect of the growth process on boron nitride thin films electrical properties

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:230168

Badi, N; Bousetta, A; Lu, M ^[1]

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1. Univ. of Houston, TX (United States); and others

Boron nitride thin films were grown on Si substrates using electron cyclotron resonance (ECR) plasma-ion beam (IBD), and neutral beam (NBD) assisted vapor depositions. The electrical properties of the BN films were investigated using Hall measurements. It was found that the films grown by NBD technique where p-type, those grown by ECR technique where n-type, whereas those grown by IBD where either n- to p-type depending on the ion energy. The composition of the films was investigated using EPMA, and it was found that most films were off-Stoichiometric (B/N <1 for ECR and B/N> 1 for NBD and IBD). The B/N ratio was higher for IBD BN films (up to 22 %). A model based on native defects centers (nitrogen vacancy and boron anti-site) is presented to account for the conductivity of the BN films.

• OSTI ID: 230168
• Report Number(s): CONF-950840--; CNN: Grant NAGW977; ARP-00365224; Grant 93761718
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
TEMPERATURE DEPENDENCE
THIN FILMS