Diamond coatings on integrated circuits
Conference
·
OSTI ID:230131
- Michigan State Univ., East Lansing, MI (United States)
Diamond over-coatings on substrates which contain microelectronic circuitry may provide a means for reduction of thermal hot-spots, or act as a superior passivation layer. This study reports the results of microwave plasma-assisted chemical vapor deposition of diamond on silicon substrates which contain microelectronic devices. Deposition temperatures are compatible with the aluminum metallization technology commonly used in integrated circuit fabrication. Both passive devices (diffused resistors) and active devices (transistors) were successfully coated.
- OSTI ID:
- 230131
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0131
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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