Diamond transistors and circuits

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:230017

Dreifus, D L; Holmes, J S; Stoner, B R ^[1]

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1. Kobe Steel USA Inc., Research Triangle Park, NC (United States)

Metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on (100) highly-oriented polycrystalline diamond (HOD) and single crystal insulating diamond substrates. The HOD material has properties superior to randomly-oriented, polycrystalline diamond and offers a viable alternative to large area single crystal diamond. Concentric-ring FETs were fabricated using standard optical lithography and silicon dioxide was used as the gate dielectric. Diamond FETs exhibited well-behaved pinch-off and saturation of the channel current at temperatures up to 325{degrees}C for both HOD and single crystal diamond devices. Single crystal devices have been characterized in both enhancement and depletion-mode at elevated temperatures in excess of 500{degrees}C. Single crystal devices have been biased in common source amplifier configurations and NAND and NOR digital logic circuits. The behavior of field-effect transistors fabricated on HOD and single crystal diamond films, as well as diamond transistor circuits will be presented.

• OSTI ID: 230017
• Report Number(s): CONF-950840--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIAMONDS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
HALL EFFECT
LOGIC CIRCUITS
MORPHOLOGY
MOSFET
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS