Study of multimode semiconductor lasers with buried mesas
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
A buried-mesa AlGaAs/GaAs/GaInAs laser heterostructure emitting at a wavelength of 1050 nm is formed on a GaAs substrate by MOCVD. Mesa-stripe laser diodes with an aperture of 100 μm based on the obtained heterostructure are fabricated and studied. The internal optical losses of the laser diodes are 2.4 cm{sup −1}. The output powers in both directions achieved at a cavity length of 2900 μm in the cw and pulsed regimes were 2.1 and 23 W, respectively. (paper)
- OSTI ID:
- 23005049
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 12 Vol. 49; ISSN 1063-7818; ISSN QUELEZ
- Country of Publication:
- United States
- Language:
- English
Similar Records
Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
High power laser diodes and applications; Proceedings of the Meeting, Los Angeles, CA, Jan. 14, 15, 1988
Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Journal Article
·
Thu Sep 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:22004731
High power laser diodes and applications; Proceedings of the Meeting, Los Angeles, CA, Jan. 14, 15, 1988
Conference
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:6473673
Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Journal Article
·
Fri Sep 01 00:00:00 EDT 2017
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:22725960