Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%. (paper)
- OSTI ID:
- 22725960
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 8 Vol. 47; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6473673