Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
We have designed, fabricated and studied ultranarrow-waveguide heterostructure lasers emitting in the spectral range 1000 – 1100 nm. The lasers have been characterised by current – voltage, light – current, far-field intensity distribution and internal optical loss measurements. The ultranarrow-waveguide lasers have been shown to have a threshold current density of ∼75 A cm{sup −2}, internal quantum efficiency near 100 % and internal optical loss near the lasing threshold under 1 cm{sup −1}, which corresponds to the level of standard heterostructures. We have demonstrated the possibility of obtaining up to 5 W of output power in continuous mode and up to 30 W in pulsed mode, with a beam convergence (FWHM) of 17.8°. The slope of the internal optical loss as a function of pump current for the ultranarrow-waveguide lasers can be markedly lower than that in lasers with a standard design, but internal quantum efficiency drops to 40 % with increasing pump current. The use of barrier layers in ultranarrow-waveguide lasers makes it possible to substantially reduce the drop in internal quantum efficiency. (paper)
- OSTI ID:
- 23004980
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 7 Vol. 49; ISSN 1063-7818; ISSN QUELEZ
- Country of Publication:
- United States
- Language:
- English
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