Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

Journal Article · Sun Feb 14 23:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S106378261002017X· OSTI ID:21562345

Vasilyeva, V V; Kapitonov, V A; Lyutetskiy, A V; Nikolaev, D N; Pikhtin, N A; Slipchenko, S O; Stankevich, A L; Shamakhov, V V; Fetisova, N V; Tarasov, I S ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the threshold current density, internal quantum efficiency of stimulated emission, and differential quantum efficiency are improved as the active region thickness increases. It is demonstrated that the maximum attainable optical emission power of a semiconductor laser and the internal quantum efficiency of photoluminescence are the most sensitive to defect formation in the heterostructure and become lower as the critical thickness of the strained In{sub x}Ga{sub 1-x} As layer in the active region is exceeded.

• OSTI ID: 21562345
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH METHODS
CURRENTS
DEFECTS
DENSITY
DEPOSITION
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LAYERS
LUMINESCENCE
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SENSITIVITY
SOLID STATE LASERS
STIMULATED EMISSION
SURFACE COATING
THICKNESS
THRESHOLD CURRENT
WAVEGUIDES