Gate-tunable ReS{sub 2}/MoTe{sub 2} heterojunction with high-performance photodetection

Journal Article · Wed May 15 00:00:00 EDT 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-019-1839-3· OSTI ID:22950302

Luo, Man ^[1]; Chen, Xiaoyao ^[2]; Wu, Peisong; Wang, Hailu; Chen, Yunfeng; Chen, Fansheng; Zhang, Lili; Chen, Xiaoshuang ^[1]

---

1. Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, and Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics (China)
2. Fudan University, Laboratory of Advanced Material (China)

Van der Waals heterojunctions based on atomically thin two-dimensional (2D) materials have attracted numerous attention for their special scientific research value and promising applications in photoelectric and micro-nano electronic devices. Especially, the carrier generation, separation, and extraction process in 2D materials can be easily modulated by external field, which may facilitate some multifunctional electronics and optoelectronics. In this paper, we report a unique type-II band alignment ReS{sub 2}/MoTe{sub 2} heterojunction with rectification inversion due to the fact the bottom few-layer MoTe{sub 2} can be easily tuned from p-type to n-type state through the applied back-gate voltage. Then we study photodetection properties of ReS{sub 2}/MoTe{sub 2} heterojunction, a relatively fast photoresponse time of 109 μs and a considerable photoresponsivity of 0.34 AW{sup −1} for 520 nm at room temperature show great potential in photodetection. Our studies of ReS{sub 2}/MoTe{sub 2} heterojunction with rectification inversion and high-performance photodetection will facilitate the development of electronics and optoelectronics based on atomically-thin heterojunctions.

• OSTI ID: 22950302
• Journal Information: Optical and Quantum Electronics, Vol. 51, Issue 5; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC POTENTIAL
ELECTRONIC EQUIPMENT
HETEROJUNCTIONS
LAYERS
MATERIALS
MOLYBDENUM TELLURIDES
RHENIUM SULFIDES
TEMPERATURE RANGE 0273-0400 K
TWO-DIMENSIONAL SYSTEMS
VAN DER WAALS FORCES