Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Maiti, R.; Patil, C.; Saadi, M. A. S. R.; Xie, T.; Azadani, J. G.; Uluutku, B.; Amin, R.; Briggs, A. F.; Miscuglio, M.; Van Thourhout, D.; Solares, S. D.; Low, T.; Agarwal, R.; Bank, S. R.; Sorger, V. J.

doi:10.1038/s41566-020-0647-4

Title: Strain-engineered high-responsivity MoTe₂ photodetector for silicon photonic integrated circuits

Journal Article · Mon Jun 22 00:00:00 EDT 2020 · Nature Photonics

DOI:https://doi.org/10.1038/s41566-020-0647-4· OSTI ID:1696775

Maiti, R. ^[1]; Patil, C. ^[1]; Saadi, M. A. S. R. ^[1];

^[1];

^[2];

^[1];

^[1]; Briggs, A. F. ^[3]; Miscuglio, M. ^[1];

^[4]; Solares, S. D. ^[1]; Low, T. ^[2];

^[5]; Bank, S. R. ^[3];

^[1]

George Washington Univ., Washington, DC (United States)
Univ. of Minnesota, Minneapolis, MN (United States)
Univ. of Texas, Austin, TX (United States)
Ghent Univ., Gent (Belgium)
Univ. of Pennsylvania, Philadelphia, PA (United States)

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe₂-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W^-1) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe₂, resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz^-0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

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Research Organization:: George Washington Univ., Washington, DC (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0018041; DMR-1839175; CCF-1838435

OSTI ID:: 1696775

Journal Information:: Nature Photonics, Vol. 14, Issue 9; ISSN 1749-4885

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

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Title: Strain-engineered high-responsivity MoTe₂ photodetector for silicon photonic integrated circuits