skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Persistent photoconductivity in two-dimensional Mo 1-xW xSe 2–MoSe 2 van der Waals heterojunctions

Abstract

Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe 2 and p-type Mo 1-xW xSe 2–MoSe 2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Escuela Politecnica Nacional, Quito (Ecuador)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1247942
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 31; Journal Issue: 07; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, and Wang, Kei. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions. United States: N. p., 2016. Web. doi:10.1557/jmr.2016.35.
Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, & Wang, Kei. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions. United States. doi:10.1557/jmr.2016.35.
Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, and Wang, Kei. Tue . "Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions". United States. doi:10.1557/jmr.2016.35. https://www.osti.gov/servlets/purl/1247942.
@article{osti_1247942,
title = {Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions},
author = {Puretzky, Alexander A. and Basile, Leonardo and Idrobo, Juan Carlos and Rouleau, Christopher M. and Geohegan, David B. and Xiao, Kai and Li, Xufan and Lin, Ming -Wei and Wang, Kei},
abstractNote = {Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.},
doi = {10.1557/jmr.2016.35},
journal = {Journal of Materials Research},
issn = {0884-2914},
number = 07,
volume = 31,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Doping against the Native Propensity of MoS 2 : Degenerate Hole Doping by Cation Substitution
journal, November 2014

  • Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh
  • Nano Letters, Vol. 14, Issue 12
  • DOI: 10.1021/nl503251h

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Persistent photocurrent in amorphous chalcogenides
journal, December 1986


Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties
journal, February 2014

  • Li, Honglai; Duan, Xidong; Wu, Xueping
  • Journal of the American Chemical Society, Vol. 136, Issue 10, p. 3756-3759
  • DOI: 10.1021/ja500069b

Hybrid graphene–quantum dot phototransistors with ultrahigh gain
journal, May 2012

  • Konstantatos, Gerasimos; Badioli, Michela; Gaudreau, Louis
  • Nature Nanotechnology, Vol. 7, Issue 6
  • DOI: 10.1038/nnano.2012.60

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe 2 /MoS 2 Heterojunction p–n Diodes
journal, September 2014

  • Cheng, Rui; Li, Dehui; Zhou, Hailong
  • Nano Letters, Vol. 14, Issue 10
  • DOI: 10.1021/nl502075n

Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
journal, May 2015


Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
journal, October 2013

  • Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit
  • Nature Nanotechnology, Vol. 8, Issue 11
  • DOI: 10.1038/nnano.2013.206

Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
journal, July 2015

  • Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8666

Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
journal, December 2013

  • Gong, Yongji; Liu, Zheng; Lupini, Andrew R.
  • Nano Letters, Vol. 14, Issue 2
  • DOI: 10.1021/nl4032296

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS 2 and WS 2 Monolayers
journal, May 2014

  • Tongay, Sefaattin; Fan, Wen; Kang, Jun
  • Nano Letters, Vol. 14, Issue 6
  • DOI: 10.1021/nl500515q

Room-Temperature Giant Persistent Photoconductivity in SrTiO 3 /LaAlO 3 Heterostructures
journal, January 2012

  • Tebano, Antonello; Fabbri, Emiliana; Pergolesi, Daniele
  • ACS Nano, Vol. 6, Issue 2
  • DOI: 10.1021/nn203991q

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
journal, April 2014

  • Wang, Xingli; Gong, Yongji; Shi, Gang
  • ACS Nano, Vol. 8, Issue 5, p. 5125-5131
  • DOI: 10.1021/nn501175k

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

  • Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.150

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
journal, February 2015

  • Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7242

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013

  • Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
  • ACS Nano, Vol. 7, Issue 4, p. 2898-2926
  • DOI: 10.1021/nn400280c

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014

  • Fang, H.; Battaglia, C.; Carraro, C.
  • Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
  • DOI: 10.1073/pnas.1405435111

Twisted MoSe 2 Bilayers with Variable Local Stacking and Interlayer Coupling Revealed by Low-Frequency Raman Spectroscopy
journal, January 2016


Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport
journal, June 2014

  • Zhang, Mei; Wu, Juanxia; Zhu, Yiming
  • ACS Nano, Vol. 8, Issue 7
  • DOI: 10.1021/nn5020566

Light-emitting diodes by band-structure engineering in van der Waals heterostructures
journal, February 2015

  • Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.
  • Nature Materials, Vol. 14, Issue 3
  • DOI: 10.1038/nmat4205

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
journal, August 2014

  • Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.167

    Works referencing / citing this record:

    Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
    journal, September 2017


    Influence of defects and doping on phonon transport properties of monolayer MoSe 2
    journal, April 2018


    Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2
    journal, October 2016

    • Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan
    • Advanced Functional Materials, Vol. 27, Issue 19
    • DOI: 10.1002/adfm.201603850