Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618140166· OSTI ID:22945141

Vlasov, A. S.; Kulagina, M. M.; Troshkov, S. I.; Guseva, Yu. A. ^[1]; Pelucchi, E.; Gocalinska, A.; Juska, G. ^[2]; Romanova, A. Yu.; Buriak, P. A.; Smirnov, V. I. ^[3]; Shelaev, A. V.; Bykov, V. A. ^[4]; Mintairov, A. M. ^[1]

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1. Ioffe Institute (Russian Federation)
2. Tyndall National Institute, University College Cork (Ireland)
3. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
4. NT-MDT (Russian Federation)

We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm{sup –2}) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.

• OSTI ID: 22945141
• Journal Information: Semiconductors, Vol. 52, Issue 14; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ETCHING
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
QUALITY FACTOR
QUANTUM DOTS
TEMPERATURE RANGE 0273-0400 K
VAPOR PHASE EPITAXY