Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
- Ioffe Institute (Russian Federation)
- University of Notre Dame (United States)
- State University of New York at Albany, Institute for Materials (United States)
- St. Petersburg Academic University (Russian Federation)
- NT-MDT Spectrum Instruments (Russian Federation)
- St. Petersburg Polytechnical University (Russian Federation)
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm{sup –2}. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.
- OSTI ID:
- 22749998
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 52; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synthesis and characterization of InP, GaP, and GaInP{sub 2} quantum dots
Synthesis and characterization of InP, GaP, and GaInP{sub 2} quantum dots