Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas

Journal Article · Mon Apr 15 04:00:00 EDT 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619040146· OSTI ID:22944797

El Sayed, A. M. ^[1]

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1. Physics Department, Faculty of Science, Northern Border University (Saudi Arabia)

In this work, Experimental study of the influence of internal electric field and the temperature on the photoluminescence of InAs self assembled quantum dots inserted in AlGaAs/GaAs modulation doped hetero-structure have been investigated. The internal electric field is controlled by an appropriate design of the hetero-structure. We have observed a red shift of the photoluminescence position peaks result from the quantum confined Stark effect due to the local electric field existing in the structure. Estimation values of the internal electric field have been obtained through carrier’s densities values in interface of AlGaAs/GaAs hetero-junction. An anomalous dependence of the full width at half maximum with temperature has been found, which attributed to the carrier’s dynamics between InAs quantum dots layer and the two-dimensional electron gas.

• OSTI ID: 22944797
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
CARRIER DENSITY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRON GAS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MODULATION
PHOTOLUMINESCENCE
QUANTUM DOTS
RED SHIFT
STARK EFFECT
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS