Method of chemical doping that uses CMOS-compatible processes

Misra, Shashank; Ward, Daniel Robert; Campbell, DeAnna Marie; Lu, Tzu-Ming; Schmucker, Scott William; Anderson, Evan Michael; Leenheer, Andrew Jay; Ivie, Jeffrey Andrew

Method of chemical doping that uses CMOS-compatible processes

Patent · Tue Oct 24 04:00:00 EDT 2023

OSTI ID:2293772

Misra, Shashank; Ward, Daniel Robert; Campbell, DeAnna Marie; Lu, Tzu-Ming; Schmucker, Scott William; Anderson, Evan Michael; Leenheer, Andrew Jay; Ivie, Jeffrey Andrew

A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 11,798,808

Application Number:: 17/360,284

OSTI ID:: 2293772

Country of Publication:: United States

Language:: English

References (13)

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