Photolithography of atomic layer resist

Katzenmeyer, Aaron Michael; Misra, Shashank; Baczewski, Andrew David; Anderson, Evan Michael; Wang, George T.; Ward, Daniel Robert

Photolithography of atomic layer resist

Patent · Tue Aug 23 04:00:00 EDT 2022

OSTI ID:1925019

Katzenmeyer, Aaron Michael; Misra, Shashank; Baczewski, Andrew David; Anderson, Evan Michael; Wang, George T.; Ward, Daniel Robert

In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.

View Patent

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 11,424,135

Application Number:: 17/182,838

OSTI ID:: 1925019

Country of Publication:: United States

Language:: English

References (23)

Primary Processes of Laser-Induced Selective Dimer-Layer Removal onSi(001)−(2×1) Kanasaki, J.; Nakamura, M.; Ishikawa, K. Physical Review Letters, Vol. 89, Issue 25 https://doi.org/10.1103/PhysRevLett.89.257601	journal	November 2002
All-optical lithography process for contacting nanometer precision donor devices Ward, D. R.; Marshall, M. T.; Campbell, D. M. Applied Physics Letters, Vol. 111, Issue 19 https://doi.org/10.1063/1.4998639	journal	November 2017
Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor Koch, Matthias; Keizer, Joris G.; Pakkiam, Prasanna Nature Nanotechnology, Vol. 14, Issue 2 https://doi.org/10.1038/s41565-018-0338-1	journal	January 2019
Desorption of H from Si(111) by Resonant Excitation of the Si-H Vibrational Stretch Mode Liu, Z. Science, Vol. 312, Issue 5776 https://doi.org/10.1126/science.1124529	journal	May 2006
Scanning tunneling microscopic studies of laser-induced modifications of Si(001)-(2 × 1) surface Yasui, Kosuke; Kanasaki, Jun’ichi Journal of Applied Physics, Vol. 110, Issue 10 https://doi.org/10.1063/1.3662120	journal	November 2011
Atomic precision patterning on Si: An opportunity for a digitized process Randall, J. N.; Ballard, J. B.; Lyding, J. W. Microelectronic Engineering, Vol. 87, Issue 5-8 https://doi.org/10.1016/j.mee.2009.11.143	journal	May 2010
Conditions for femtosecond laser melting of silicon Korfiatis, D. P.; Thoma, K-A Th; Vardaxoglou, J. C. Journal of Physics D: Applied Physics, Vol. 40, Issue 21 https://doi.org/10.1088/0022-3727/40/21/047	journal	October 2007
Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques Katzenmeyer, Aaron; Dmitrovic, Sanja; Baczewski, Andrew Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020 https://doi.org/10.1117/12.2551455	conference	March 2020
Advances In Excimer Laser Lithography Jain, Kanti SPIE Proceedings https://doi.org/10.1117/12.937294	conference	March 1987
A single-atom transistor Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta Nature Nanotechnology, Vol. 7, Issue 4 https://doi.org/10.1038/nnano.2012.21	journal	February 2012
CMOS platform for atomic-scale device fabrication Škereň, Tomáš; Pascher, Nikola; Garnier, Arnaud Nanotechnology, Vol. 29, Issue 43 https://doi.org/10.1088/1361-6528/aad7ab	journal	August 2018
Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts Hallam, T.; Butcher, M. J.; Goh, K. E. J. Journal of Applied Physics, Vol. 102, Issue 3 https://doi.org/10.1063/1.2736873	journal	August 2007
Atomically Precise Placement of Single Dopants in Si Schofield, S. R.; Curson, N. J.; Simmons, M. Y. Physical Review Letters, Vol. 91, Issue 13 https://doi.org/10.1103/PhysRevLett.91.136104	journal	September 2003
Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit Keith, D.; House, M. G.; Donnelly, M. B. Physical Review X, Vol. 9, Issue 4 https://doi.org/10.1103/PhysRevX.9.041003	journal	October 2019
A two-qubit gate between phosphorus donor electrons in silicon He, Y.; Gorman, S. K.; Keith, D. Nature, Vol. 571, Issue 7765 https://doi.org/10.1038/s41586-019-1381-2	journal	July 2019
Photochemical Hydrogen Desorption from H-Terminated Silicon(111) by VUV Photons Pusel, A.; Wetterauer, U.; Hess, P. Physical Review Letters, Vol. 81, Issue 3 https://doi.org/10.1103/PhysRevLett.81.645	journal	July 1998
Atomic Precision Advanced Manufacturing for Digital Electronics Ward, Daniel R.; Schmucker, Scott W.; Anderson, Evan M. EDFA Technical Articles, Vol. 22, Issue 1 https://doi.org/10.31399/asm.edfa.2020-1.p004	journal	February 2020
Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures Jellison, G. E.; Modine, F. A. Physical Review B, Vol. 27, Issue 12 https://doi.org/10.1103/PhysRevB.27.7466	journal	June 1983
Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms Shen, T. -C.; Wang, C.; Abeln, G. C. Science, Vol. 268, Issue 5217 https://doi.org/10.1126/science.268.5217.1590	journal	June 1995
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces Gupta, P.; Colvin, V. L.; George, S. M. Physical Review B, Vol. 37, Issue 14 https://doi.org/10.1103/PhysRevB.37.8234	journal	May 1988
Heat-flow calculation of pulsed excimer ultraviolet laser’s melting of amorphous and crystalline silicon surfaces Ong, C. K.; Sin, E. H.; Tan, H. S. Journal of the Optical Society of America B, Vol. 3, Issue 5 https://doi.org/10.1364/JOSAB.3.000812	journal	May 1986
Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy Xu, Jun; Overbury, S. H.; Wendelken, J. F. Physical Review B, Vol. 53, Issue 8 https://doi.org/10.1103/PhysRevB.53.R4245	journal	February 1996
Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy Oberbeck, L.; Curson, N. J.; Hallam, T. Applied Physics Letters, Vol. 85, Issue 8 https://doi.org/10.1063/1.1784881	journal	August 2004

Similar Records

Method of chemical doping that uses CMOS-compatible processes

Patent · Tue Oct 24 00:00:00 EDT 2023 · OSTI ID:2293772

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

Journal Article · Fri Mar 05 19:00:00 EST 2021 · Journal of Micro/Nanopatterning, Materials, and Metrology · OSTI ID:1772029

Photolithography of atomic layer resist

Citation Formats

References (23)

Similar Records

Related Subjects