Al-alkyls as acceptor dopant precursors for atomic-scale devices

Owen, J. H. G.; Campbell, Q.; Santini, R.; Ivie, J. A.; Baczewski, A. D.; Schmucker, S. W.; Bussmann, E.; Misra, S.; Randall, J. N.

doi:10.1088/1361-648x/ac1ddf

Al-alkyls as acceptor dopant precursors for atomic-scale devices

Journal Article · 01 September 2021 · Journal of Physics. Condensed Matter

DOI:https://doi.org/10.1088/1361-648x/ac1ddf· OSTI ID:1822247

^[1]; ^[2]; Santini, R. ^[1]; Ivie, J. A. ^[2]; Baczewski, A. D. ^[2]; Schmucker, S. W. ^[2]; Bussmann, E. ^[2]; Misra, S. ^[2]; Randall, J. N. ^[1]

Zyvex Labs, LLC, Richardson, TX (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desirable to expand this set of precursors to include dopants with organic functional groups and in this work we consider aluminium alkyls, to expand the applicability of APAM. We explore the impurity content and selectivity that results from using trimethyl aluminium and triethyl aluminium precursors on Si(001) to ultradope with aluminium through a hydrogen mask. Comparison of the methylated and ethylated precursors helps us understand the impact of hydrocarbon ligand selection on incorporation surface chemistry. Combining scanning tunneling microscopy and density functional theory calculations, we assess the limitations of both classes of precursor and extract general principles relevant to each.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zyvex Labs, LLC, Richardson, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: NA0003525; EE0008311

OSTI ID:: 1822247

Alternate ID(s):: OSTI ID: 1842324

Report Number(s):: SAND-2021-10606J; 699859; TRN: US2214447

Journal Information:: Journal of Physics. Condensed Matter, Vol. 33, Issue 46; ISSN 0953-8984

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (32)

Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist Mitsui, Toshiyuki; Hill, Eric; Ganz, Eric Journal of Applied Physics, Vol. 85, Issue 1 https://doi.org/10.1063/1.369483	journal	January 1999
The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table van Setten, M. J.; Giantomassi, M.; Bousquet, E. Computer Physics Communications, Vol. 226 https://doi.org/10.1016/j.cpc.2018.01.012	journal	May 2018
Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope Lyding, J. W.; Shen, T. ‐C.; Hubacek, J. S. Applied Physics Letters, Vol. 64, Issue 15 https://doi.org/10.1063/1.111722	journal	April 1994
An STM study of the chemisorption of C2H4 on Si(001)(2 × 1) Mayne, A. J.; Avery, A. R.; Knall, J. Surface Science, Vol. 284, Issue 3 https://doi.org/10.1016/0039-6028(93)90495-6	journal	March 1993
A two-qubit gate between phosphorus donor electrons in silicon He, Y.; Gorman, S. K.; Keith, D. Nature, Vol. 571, Issue 7765 https://doi.org/10.1038/s41586-019-1381-2	journal	July 2019
The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers Keizer, Joris G.; McKibbin, Sarah R.; Simmons, Michelle Y. ACS Nano, Vol. 9, Issue 7 https://doi.org/10.1021/acsnano.5b01638	journal	June 2015
A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1 Campbell, Quinn; Ivie, Jeffrey A.; Bussmann, Ezra The Journal of Physical Chemistry C, Vol. 125, Issue 1 https://doi.org/10.1021/acs.jpcc.0c08919	journal	January 2021
Initial stages of Al growth from dimethylaluminum hydride on silicon Mitsui, Toshiyuki; Hill, Eric; Curtis, Robert Physical Review B, Vol. 59, Issue 12 https://doi.org/10.1103/physrevb.59.8123	journal	March 1999
Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface Longo, Roberto C.; McDonnell, Stephen; Dick, D. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 3 https://doi.org/10.1116/1.4864619	journal	May 2014
Variable‐temperature scanning tunneling microscope Lyding, J. W.; Skala, S.; Hubacek, J. S. Review of Scientific Instruments, Vol. 59, Issue 9 https://doi.org/10.1063/1.1140047	journal	September 1988
Reaction paths of phosphine dissociation on silicon (001) Warschkow, O.; Curson, N. J.; Schofield, S. R. The Journal of Chemical Physics, Vol. 144, Issue 1 https://doi.org/10.1063/1.4939124	journal	January 2016
A single-atom transistor Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta Nature Nanotechnology, Vol. 7, Issue 4 https://doi.org/10.1038/nnano.2012.21	journal	February 2012
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist Mitsui, Toshiyuki; Curtis, Rob; Ganz, Eric Journal of Applied Physics, Vol. 86, Issue 3 https://doi.org/10.1063/1.370946	journal	August 1999
Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon Shamim, Saquib; Weber, Bent; Thompson, Daniel W. Nano Letters, Vol. 16, Issue 9 https://doi.org/10.1021/acs.nanolett.6b02513	journal	August 2016
Atomic-scale control of tunneling in donor-based devices Wang, Xiqiao; Wyrick, Jonathan; Kashid, Ranjit V. Communications Physics, Vol. 3, Issue 1 https://doi.org/10.1038/s42005-020-0343-1	journal	May 2020
STM-Induced Desorption and Lithographic Patterning of Cl–Si(100)-(2 × 1) Dwyer, K. J.; Dreyer, Michael; Butera, R. E. The Journal of Physical Chemistry A, Vol. 123, Issue 50 https://doi.org/10.1021/acs.jpca.9b07127	journal	November 2019
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy Stock, Taylor J. Z.; Warschkow, Oliver; Constantinou, Procopios C. ACS Nano, Vol. 14, Issue 3 https://doi.org/10.1021/acsnano.9b08943	journal	March 2020
Toward Atomic-Scale Patterned Atomic Layer Deposition: Reactions of Al ₂ O ₃ Precursors on a Si(001) Surface with Mixed Functionalizations Longo, R. C.; Owen, J. H. G.; McDonnell, S. The Journal of Physical Chemistry C, Vol. 120, Issue 5 https://doi.org/10.1021/acs.jpcc.5b09053	journal	February 2016
Direct writing of submicron metallic features with a scanning tunneling microscope Silver, R. M.; Ehrichs, E. E.; de Lozanne, A. L. Applied Physics Letters, Vol. 51, Issue 4 https://doi.org/10.1063/1.98462	journal	July 1987
Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures Nörenberg, H.; Bowler, D. R.; Briggs, G. A. D. Applied Surface Science, Vol. 123-124 https://doi.org/10.1016/s0169-4332(97)00449-2	journal	January 1998
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy Sinthiptharakoon, Kitiphat; Schofield, Steven R.; Studer, Philipp Journal of Physics: Condensed Matter, Vol. 26, Issue 1 https://doi.org/10.1088/0953-8984/26/1/012001	journal	December 2013
Hydrogen diffusion on Si(001) Owen, J. H. G.; Bowler, D. R.; Goringe, C. M. Physical Review B, Vol. 54, Issue 19 https://doi.org/10.1103/physrevb.54.14153	journal	November 1996
Bipolar device fabrication using a scanning tunnelling microscope Škereň, Tomáš; Köster, Sigrun A.; Douhard, Bastien Nature Electronics, Vol. 3, Issue 9 https://doi.org/10.1038/s41928-020-0445-5	journal	July 2020
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl ₃ on Si(100) Dwyer, Kevin J.; Baek, Sungha; Farzaneh, Azadeh ACS Applied Materials & Interfaces, Vol. 13, Issue 34 https://doi.org/10.1021/acsami.1c10616	journal	August 2021
Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers Keizer, Joris G.; Koelling, Sebastian; Koenraad, Paul M. ACS Nano, Vol. 9, Issue 12 https://doi.org/10.1021/acsnano.5b06299	journal	October 2015
Quantum engineering at the silicon surface using dangling bonds Schofield, S. R.; Studer, P.; Hirjibehedin, C. F. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2679	journal	April 2013
Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination McDonnell, Stephen; Longo, Roberto C.; Seitz, Oliver The Journal of Physical Chemistry C, Vol. 117, Issue 39 https://doi.org/10.1021/jp4060022	journal	September 2013
Alane adsorption and dissociation on the Si(0 0 1) surface Smith, R. L.; Bowler, D. R. Journal of Physics: Condensed Matter, Vol. 29, Issue 39 https://doi.org/10.1088/1361-648x/aa7e48	journal	August 2017
Superconductivity in doped cubic silicon Bustarret, E.; Marcenat, C.; Achatz, P. Nature, Vol. 444, Issue 7118 https://doi.org/10.1038/nature05340	journal	November 2006
Reaction paths of alane dissociation on the Si(0 0 1) surface Smith, Richard; Bowler, David R. Journal of Physics: Condensed Matter, Vol. 30, Issue 10 https://doi.org/10.1088/1361-648x/aaaa91	journal	February 2018
Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices Wyrick, Jonathan; Wang, Xiqiao; Kashid, Ranjit V. Advanced Functional Materials, Vol. 29, Issue 52 https://doi.org/10.1002/adfm.201903475	journal	August 2019

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