Al-alkyls as acceptor dopant precursors for atomic-scale devices

Owen, J. H. G.; Campbell, Q.; Santini, R.; Ivie, J. A.; Baczewski, A. D.; Schmucker, S. W.; Bussmann, E.; Misra, S.; Randall, J. N.

doi:10.1088/1361-648x/ac1ddf

Al-alkyls as acceptor dopant precursors for atomic-scale devices

Journal Article · Wed Sep 01 00:00:00 EDT 2021 · Journal of Physics. Condensed Matter

DOI:https://doi.org/10.1088/1361-648x/ac1ddf· OSTI ID:1822247

^[1]; ^[2]; Santini, R. ^[1]; Ivie, J. A. ^[2]; Baczewski, A. D. ^[2]; Schmucker, S. W. ^[2]; Bussmann, E. ^[2]; Misra, S. ^[2]; Randall, J. N. ^[1]

Zyvex Labs, LLC, Richardson, TX (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desirable to expand this set of precursors to include dopants with organic functional groups and in this work we consider aluminium alkyls, to expand the applicability of APAM. We explore the impurity content and selectivity that results from using trimethyl aluminium and triethyl aluminium precursors on Si(001) to ultradope with aluminium through a hydrogen mask. Comparison of the methylated and ethylated precursors helps us understand the impact of hydrocarbon ligand selection on incorporation surface chemistry. Combining scanning tunneling microscopy and density functional theory calculations, we assess the limitations of both classes of precursor and extract general principles relevant to each.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Zyvex Labs, LLC, Richardson, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: EE0008311; NA0003525

OSTI ID:: 1822247

Alternate ID(s):: OSTI ID: 1842324

Report Number(s):: SAND--2021-10606J; 699859

Journal Information:: Journal of Physics. Condensed Matter, Journal Name: Journal of Physics. Condensed Matter Journal Issue: 46 Vol. 33; ISSN 0953-8984

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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