IR Photodetectors Based on Isoperiodic Epitaxial Layers of Lead Tin Chalcogenides

Journal Article · Fri Mar 15 04:00:00 EDT 2019 · Technical Physics

DOI:https://doi.org/10.1134/S1063784219030253· OSTI ID:22927735

Tkachuk, A. I.; Ryabets, S. I. ^[1]

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1. Vinnichenko Central Ukrainian State Pedagogical University (Ukraine)

IR photodetectors have been made on Pb/δ-layer/p-Pb{sub 1 –x}Sn{sub x}Te{sub 1 –y}Se{sub y}/p{sup +}-Pb{sub 0.8}Sn{sub 0.2}Te/Au and Au/δ-layer/n-Pb{sub 1 –x}Sn{sub x}Te{sub 1 –y}Se{sub y}(BaF{sub 2})/Pb surface-barrier structures prepared by liquid-phase epitaxy and thermal evaporation. At ~170 K, peak wavelength λ{sub p} ~ 7.9–8.2 μm, and cutoff wavelength λ{sub c} ~ 8.2–8.5 μm, the former surface-barrier structure has product R{sub 0}A (where R{sub 0} is the zero-bias differential resistance and A is the active surface area) = 0.31–0.97 Ω cm{sup 2}, peak quantum efficiency η{sub λ} = 0.32–0.48, and specific detectability D{sub λ}{sup ∗} = (0.72–1.83) × 10{sup 10} cm Hz{sup 1/2} W{sup –1}. For photodiodes made on the latter surface-barrier structure, these parameters measured at ~80 K are R{sub 0}A = 1.71–2.72 Ω cm{sup 2}, η{sub λ} = 0.34–0.49, and D{sub λ}{sup ∗} = (3.02–4.51) × 10{sup 10} cm Hz{sup 1/2} W{sup –1} at λ{sub p} ~ 8.6–12.3 μm and λ{sub c} ~ 9.2–12.9 μm.

• OSTI ID: 22927735
• Journal Information: Technical Physics, Journal Name: Technical Physics Journal Issue: 3 Vol. 64; ISSN 1063-7842
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM FLUORIDES
CHALCOGENIDES
EVAPORATION
LAYERS
LEAD COMPOUNDS
LIQUID PHASE EPITAXY
PHOTODETECTORS
PHOTODIODES
QUANTUM EFFICIENCY
SURFACE AREA
SURFACES
TIN COMPOUNDS
WAVELENGTHS