Long wavelength Pb/sub 1-x/Sn/sub x/Te homostructure diode lasers having a gallium-doped cladding layer

Journal Article · Tue Feb 15 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93927· OSTI ID:6535176

Zussman, A; Feit, Z; Eger, D; Shahar, A

The electron concentration in Ga-doped liquid phase epitaxy (LPE) layers of Pb/sub 1-x/Sn/sub x/Te was studied as a function of the Ga concentration in the growth solution for various x compositions. Maximum electron concentrations of 5 x 10/sup 19/ cm/sup -3/ and 2 x 10/sup 18/ cm/sup -3/ were measured for x = 0 and x = 0.3, respectively: the highest values ever published for these LPE grown compositions. n/sup +/-p-p/sup +/ Pb/sub 1-x/Sn/sub x/Te homostructure diode lasers with a Ga-doped cladding layer were fabricated. The lasers showed extended wavelength ranges (11.5< or =lambda< or =18.5 ..mu..m for x = 0.24 and 8.2 ..mu..m< or =lambda< or =11.2 ..mu..m for x = 0.12), and low threshold current densities (30 A/cm at T = 10 K). The threshold current density at low temperatures was found to be determined by excess tunneling currents.

• Research Organization: Solid State Physics Department, Soreq Nuclear Research Centre, Yavne, Israel
• OSTI ID: 6535176
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CURRENT DENSITY
CURRENTS
DATA
DISPERSIONS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON DENSITY
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GALLIUM
HOMOJUNCTIONS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
LEAD COMPOUNDS
LEAD TELLURIDES
MATERIALS
METALS
MIXTURES
NUMERICAL DATA
QUANTITY RATIO
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLUTIONS
TELLURIDES
TELLURIUM COMPOUNDS
THRESHOLD CURRENT
TIN COMPOUNDS
TIN TELLURIDES
ULTRALOW TEMPERATURE