Single heterostructure lasers of PbS/sub 1-x/Se/sub x/ and Pb/sub 1-x/Sn/sub x/Se with wide tunability

Journal Article · Mon Aug 01 04:00:00 EDT 1977 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1977.1069416· OSTI ID:5375734

Linden, K J; Nill, K W; Butler, J F

Single-heterostructure diode lasers formed by compositional interdiffusion in PbS/sub 1-x/Se/sub x/ and Pb/sub 1-x/Sn/sub x/Se and by liquid-phase-epitaxy (LPE) in Pb/sub 1-x/Sn/sub x/Se show performance characteristics significantly better than those observed in conventional homostructure lasers. Higher operating temperatures were obtained for all compositions, with cw operation above 77/sup 0/K being achieved for compositions corresponding to wavelengths from 4.1 to 12.7 ..mu..m. Single-ended, cw powers as high as 70 mW, corresponding to eta/sub ext/ = 44% were observed in PbS/sub 1-x/Se/sub x/ devices.

• Research Organization: Laser Analytics Inc., Lexington, MA
• OSTI ID: 5375734
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-13:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CRYSTAL GROWTH
EPITAXY
FABRICATION
LASERS
LEAD COMPOUNDS
LEAD SELENIDES
LEAD SULFIDES
PERFORMANCE
SELENIDES
SELENIUM COMPOUNDS
SELENIUM SULFIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SULFIDES
SULFUR COMPOUNDS
TIN COMPOUNDS
TIN SELENIDES